4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping Conditions
| Autor: | Hajime Okumura, Takeshi Mitani, Tetsuo Takahashi, Tomohisa Kato, Yuji Matsumoto, Kazuhisa Kurashige, Toru Ujihara, Naoyoshi Komatsu |
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| Rok vydání: | 2015 |
| Předmět: |
Condensed Matter::Materials Science
Materials science Chemical engineering Mechanics of Materials Condensed Matter::Superconductivity Mechanical Engineering Scientific method Doping Mineralogy Condensed Matter::Strongly Correlated Electrons General Materials Science Conductivity Condensed Matter Physics |
| Zdroj: | Materials Science Forum. :9-13 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.821-823.9 |
| Popis: | We have investigated the solution growth under various Al-N co-doping conditions. Both p-type and n-type 4H-SiC were successfully grown under Al-N co-doping conditions, while using the effect of Al-addition to stabilize both growth surface and polytype. The doping and electrical properties were investigated systematically. Interaction between Al and N in the incorporation process and electrical property under heavily co-doped conditions were discussed. |
| Databáze: | OpenAIRE |
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