Growth and characterization of Si, S and Zn-doped InP in selective area growth conditions

Autor:	D. Herrati, Jean Decobert, Leon Goldstein, V. Colson, Denis Leclerc
Rok vydání:	2003
Předmět:	Dopant Chemistry Inorganic chemistry Doping Diethylzinc Condensed Matter Physics Epitaxy Silane law.invention Inorganic Chemistry chemistry.chemical_compound Optical microscope law Impurity Materials Chemistry Growth rate
Zdroj:	Journal of Crystal Growth. 248:390-394
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(02)01896-1
Popis:	The incorporation and doping process of Si, S and Zn impurities in InP by metalorganic vapor phase epitaxy have been studied both in standard growth conditions (SGC) and in selective area growth (SAG) conditions using silane (SiH 4 ), hydrogen sulphide (H 2 S) and diethylzinc (DEZn). It was observed that in SGC, the dopant species behaviour, for two different growth rates, is in line with the expectations from the model and some previous reports made on doped GaAs and InP. On the other hand, in SAG conditions, the Si concentration was unexpectedly independent of the growth rate. Furthermore, the Zn and S codoping shows a Zn dopant concentration enhancement in SAG conditions, while it remains constant in SGC. These differences in behaviour are induced by the addition of dopant species transported by lateral vapour phase diffusion from the patterned region to the open region.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2d2889d95f6a6391dbdcd14073d014f1 https://doi.org/10.1016/s0022-0248(02)01896-1 Zobrazit plný text záznamu Full Text from ScienceDirect