Excited states of the Mg acceptor in GaAs

Autor:	R. L. Hengehold, Y. K. Yeo, J. R. Cavins
Rok vydání:	1988
Předmět:	Photoluminescence Chemistry Atomic electron transition Excited state Analytical chemistry General Physics and Astronomy Atomic physics Epitaxy Ground state Luminescence Acceptor Fourier transform spectroscopy
Zdroj:	Journal of Applied Physics. 64:6761-6766
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.342009
Popis:	Selective pair luminescence (SPL) has been used to measure the excited states of shallow acceptors in undoped vapor‐phase epitaxial (VPE) grown GaAs and Mg‐implanted VPE GaAs. A set of experimental data for Mg excited states in GaAs is presented here. The results show that the 2P3/2 ‐, 2S3/2 ‐, and 2P5/2 ‐1S3/2 energy differences are 17.0, 20.0, and 21.0 meV, respectively. The value of the 2S3/2 state agrees very well with the previously reported two‐hole transition luminescence result, and the other two values for the excited states agree very well with those reported for far‐infrared Fourier transform spectroscopy. This assignment was further confirmed by making SPL measurements on Mg‐implanted GaAs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2d255ba4e6d9a86423cdad73860d756e https://doi.org/10.1063/1.342009 Zobrazit plný text záznamu