Effects of nonlinear storage capacitor on DRAM READ/WRITE
| Autor: | C. Sudhama, Rajesh Khamankar, Jiyoung Kim, Bo Jiang, Junsung Lee |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Reservoir capacitor
Very-large-scale integration Engineering business.industry Spice Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Decoupling capacitor Signal Electronic Optical and Magnetic Materials law.invention Capacitor Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Electronic engineering Electrical and Electronic Engineering business Dram Voltage |
| Zdroj: | IEEE Electron Device Letters. 15:126-128 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/55.285408 |
| Popis: | Important aspects of nonlinear storage capacitor switching and their impact on DRAM READ/WRITE operations are explained using a simple model and PSpice simulation. The voltage signal and charge-transfer rate are found to be dependent not only on the total charged stored, but also on the exact shape of the storage capacitor Q-V curve. Typical paraelectric capacitors are shown to deliver a smaller voltage signal than a linear capacitor that has the same stored charge at the operating voltage. Further, typical paraelectric capacitors have slower READ but faster WRITE compared to the linear capacitor. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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