Low thermal conductivity of amorphous Si/Si 0.75 Ge 0.25 multilayer films with Au-interlayers

Autor:	Zhigang Zeng, F. J. Ye, Zhiyu Hu, Luo Xi, Cong Lin, X. P. Zhang, B. J. Shen, L. C. Dai
Rok vydání:	2014
Předmět:	Metal Materials science Thermal conductivity Nonmetal visual_art Thermal resistance visual_art.visual_art_medium General Physics and Astronomy Interfacial thermal resistance Coupling (piping) Sputter deposition Composite material Amorphous solid
Zdroj:	EPL (Europhysics Letters). 105:27003
ISSN:	1286-4854 0295-5075
DOI:	10.1209/0295-5075/105/27003
Popis:	The cross-plane thermal conductivity of amorphous Si/Si0.75Ge0.25 multilayer films with Au-interlayers prepared by magnetron sputtering was successfully measured using a differential technique at room temperature. Though gold has great thermal conductivity, the samples possess a thermal conductivity of 0.53 W/mK, which is about 50% of the amorphous Si/Si0.75Ge0.25 multilayer films. The interfacial thermal resistance is the sum of the phonon-phonon interfacial thermal resistance and the electron-phonon thermal resistance. The thermal conductivity of the samples are significantly determined by the electron-phonon coupling in a metal-nonmetal system and can be lower by choosing a convenient thickness of nonmetal and metal layers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2d1b36963ffb9266204ee3e144c4129b https://doi.org/10.1209/0295-5075/105/27003 Zobrazit plný text záznamu