Controlling emitting dipole orientations by N^O-ancillary electronic effects of [Ir(C^N)2(N^O)]-heteroleptic Ir(iii )-complexes towards efficient near-infrared (NIR) polymer light-emitting diodes (PLEDs)
| Autor: | Wai Yeung Wong, Wentao Li, Guorui Fu, Tiezheng Miao, Baowen Wang, Xingqiang Lü, Jiaxiang Liu, Siyu Hou, Weixu Feng |
|---|---|
| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | Journal of Materials Chemistry C. 9:16751-16761 |
| ISSN: | 2050-7534 2050-7526 |
| DOI: | 10.1039/d1tc03485e |
| Popis: | Despite the domination of conventional [Ir(C^N)2(L^X)]-bis-heteroleptic iridium(III)-complexes with NIR-phosphorescence (NIR = near-infrared) as dopants for reliable NIR-OLEDs/PLEDs (organic/polymer light-emitting diodes), the achievement of high performance remains a real challenge. In this study, taking Hiqbt (1-(benzo[b]-thiophen-2-yl)-isoquinoline) as the C^N ligand and one of the asymmetric Schiff-base ligands with different electronic effects as the N^O-ancillary ligand, three novel C1-symmetric [Ir(C^N)2(N^O)]-bis-heteroleptic iridium(III)-complexes 1–3 were developed. With contributions from the TDM (transition dipole moment) and the emitting dipole orientation induced by the N^O-ancillary electronic effects, the doped NIR-PLEDs-1–3 exhibited attractive high efficiency (ηmaxEQE = 3.3–5.6%; λem = 708–712 nm) apart from the almost negligible ( |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|