A Comparison Of Hot-electron And Fowler-nordheim Characterization Of Charging Events In A 0.5-μm Cmos Technology

Autor:	C. Johnson, K. Watson, Terence B. Hook, S. Mittl
Rok vydání:	2005
Předmět:	Stress (mechanics) Fowler nordheim Materials science CMOS business.industry Electrical engineering Optoelectronics Stress measurement Electron business Hot electron Characterization (materials science) Threshold voltage
Zdroj:	Proceedings of 1st International Symposium on Plasma Process-Induced Damage.
DOI:	10.1109/ppid.1996.715229
Popis:	A comparison of techniques used to expose latent damage resulting from process-induced charging events is presented. In particular, the result of hot- electron stress is compared to Fowler-Nordheim stress for three different charging signatures. Although both techniques can illuminate some charging events, hot-carrier stressing is shown to be superior because it is sensitive to all three types of charging events, and can quantify the effect of these process-induced events.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2d164032e55bb8a7286fae08d4dcdc18 https://doi.org/10.1109/ppid.1996.715229 Zobrazit plný text záznamu