| Autor: |
Ying-Ying Zhang, Jin-Suk Wang, Ga-Won Lee, Hi-Deok Lee, Sun-Kyu Kong, Hong-Sik Shin, Shi-Guang Li, Kee-Young Park, Soon-Yen Jung |
| Rok vydání: |
2009 |
| Předmět: |
|
| Zdroj: |
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 22:457-461 |
| ISSN: |
1226-7945 |
| DOI: |
10.4313/jkem.2009.22.6.457 |
| Popis: |
In this paper, barrier height between Ni-silicide and source/drain is reduced utilizing Pd stacked structure (Pd/Ni/TiN) for high performance PMOSFET. It is shown that the barrier height is decreased by Pd incorporation and is dependent on the Pd thickness. Therefore, Ni-silicide using the Pd stacked structure is promising for high performance nano-cale PMOSFET. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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