Integrated-optics photodetector utilizing the external photoelectric effect in a Schottky barrier

Autor:	V N Morozov, V A Karavanskiĭ, L F Plavich, V. L. Smirnov, Yurii M Popov
Rok vydání:	1983
Předmět:	Photocurrent Materials science business.industry Schottky barrier General Engineering Photodetector Schottky diode Photoelectric effect Metal–semiconductor junction Waveguide (optics) Optics Optoelectronics Quantum efficiency business
Zdroj:	Soviet Journal of Quantum Electronics. 13:259-261
ISSN:	0049-1748
DOI:	10.1070/qe1983v013n02abeh004138
Popis:	An investigation was made of the possibility of using the photoelectric effect in a Schottky barrier at a metal–semiconductor interface for detection of waveguide radiation. The dependences of the photocurrent and photo-emf on the power at the entry to such a photodetector were determined for GaAsxP1–x–GaP waveguide structures with barriers formed at gold and silver contacts, and the quantum efficiency was calculated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2d1524ef10099024f387be94a2431a36 https://doi.org/10.1070/qe1983v013n02abeh004138 Zobrazit plný text záznamu