Characterization of silicon ion-implanted GaN and AlGaN

Autor:	Taroh Inada, Tohru Nakamura, Yuki Toyoda, Masataka Satoh, Kazuki Nomoto
Rok vydání:	2012
Předmět:	High concentration Nuclear and High Energy Physics Materials science Silicon Annealing (metallurgy) business.industry chemistry.chemical_element Ion Ion implantation chemistry Optoelectronics Protection layer business Instrumentation Ohmic contact
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 272:125-127
ISSN:	0168-583X
Popis:	Electrical properties for Si-implanted n-type GaN and AlGaN layers and contact resistances of ohmic contacts (Ti/Al) formed on these layers were examined. Experimental results clearly show that ohmic contacts on n-type GaN and n-type AlGaN with a low specific-contact resistance of under 10−7 and 10−6 Ω cm2 can be fabricated on the high concentration n-type layers, which have been formed by Si ion implantation (30 keV: 1 × 1014, 5 × 1014, 1 × 1015 and 2 × 1015/cm2) and subsequent annealing at 1250 °C for 2 min using a Si3N4 as a surface protection layer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2cffe80721e9645538b1b5ad70ada6a9 https://doi.org/10.1016/j.nimb.2011.01.047 Zobrazit plný text záznamu Full Text from ScienceDirect