ALD Grown Dielectrics for Cap on a Chip: Fabrication and Characterization
| Autor: | Radim Hrdy, Jaromir Hubalek, Patrik Fillner, D. Nespor, Jan Prasek |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Fabrication business.industry Oxide Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Semiconductor device Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Energy storage law.invention Atomic layer deposition Capacitor chemistry.chemical_compound chemistry Hardware_GENERAL law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Optoelectronics Wafer 0210 nano-technology business |
| Zdroj: | 2018 41st International Spring Seminar on Electronics Technology (ISSE). |
| DOI: | 10.1109/isse.2018.8443766 |
| Popis: | Atomic layer deposition (ALD) is a strong method of fabrication of high-k dielectrics with excellent properties. We present the ALD grown high-k CMOS compatible dielectrics used for capacitors on a chip application. Several dielectric films based on Al 2 O 3 and HfO 2 were grown on high-conductive silicon wafers and used as on-chip circular capacitors with diameter from 100 to 1500 µm. The effect of the interface between dielectric layers was examined in oxide stuck-based films deposited by plasma-enhanced atomic layer deposition. Performed material, structural and electrical analyses of deposited dielectrics confirmed their highly promising properties for application in new generation of 3D capacitors, semiconductor devices and energy storage element. |
| Databáze: | OpenAIRE |
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