Influence of the type and concentration of a dopant on the dynamics of the beta-induced variation in the microhardness of silicon

Autor:	Yu. I. Golovin, N. Yu. Suchkova, A. A. Dmitrievskiĭ
Rok vydání:	2008
Předmět:	inorganic chemicals Materials science Silicon Solid-state physics Dopant Dynamics (mechanics) Analytical chemistry chemistry.chemical_element Condensed Matter Physics Indentation hardness Electronic Optical and Magnetic Materials chemistry Electron beam processing Beta (finance) Softening
Zdroj:	Physics of the Solid State. 50:25-27
ISSN:	1090-6460 1063-7834
DOI:	10.1134/s106378340801006x
Popis:	The influence of the type and concentration of a dopant (P, Sb, B) on the dynamics of the transformation of a system of structural (intrinsic and radiation-induced) defects of silicon under low-intensity electron irradiation is investigated. A qualitative model is proposed for the formation of the complexes of secondary radiation defects responsible for the maxima of beta-induced softening of silicon single crystals.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2cfa7ade3841f2dacf7a3e73e35be42e https://doi.org/10.1134/s106378340801006x Zobrazit plný text záznamu Full text from SpringerLink