Low temperature chemical preparation of semiconducting transition metal chalcogenide films for energy conversion and storage, lubrication and surface protection

Autor: J. Luck, M. Kunst, G. Chatzitheodorou, S. Fiechter, Helmut Tributsch
Rok vydání: 1988
Předmět:
Zdroj: Materials Research Bulletin. 23:1261-1271
ISSN: 0025-5408
DOI: 10.1016/0025-5408(88)90114-6
Popis: A simple technique is presented for the production of films of transition metal disulfides such as MoS 2 , WS 2 , FeS 2 , or RuS 2 by the reaction of transition metal carbonyls (e.g. Mo(CO) 6 , W(CO) 6 , Fe(CO) 5 , Ru 3 (CO) 12 ) with a sulfur source (e.g. S, H 2 S) in an organic solvent (e.g. benzene, toluene, xylene, mesitylene (1,3,5-trimethyl-benzene)) at temperatures ranging between 80 to 165 °C. The quality of the materials and films has been investigated and some applications are discussed. They include use of the chemically prepared sulfides as photoactive materials (e.g. MoS 2 , WS 2 , FeS 2 ), as lubricating films (MoS 2 ), as electrodes for Li-batteries (MoS 2 , FeS 2 ) and for corrosion protection (RuS 2 ).
Databáze: OpenAIRE