Growth mechanism of a-axis '123' thin films on LaAlO3 without PBCO interface
| Autor: | J. F. Hamet, B. Blanc-Guilhon, B. Raveau, A. Taffin, Bernard Mercey, M. Hervieu |
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| Rok vydání: | 1993 |
| Předmět: |
chemistry.chemical_classification
Materials science Condensed matter physics Energy Engineering and Power Technology Crystal growth Substrate (electronics) Condensed Matter Physics Electronic Optical and Magnetic Materials Tetragonal crystal system chemistry Phase (matter) Perpendicular Electrical and Electronic Engineering Thin film Inorganic compound Perovskite (structure) |
| Zdroj: | Physica C: Superconductivity. 214:55-63 |
| ISSN: | 0921-4534 |
| DOI: | 10.1016/0921-4534(93)90107-2 |
| Popis: | The growth mechanism of a -axis “123” thin film on LaAlO 3 has been studied by HREM. At 650°C, a tetragonal marquetry-like structure is rapidly formed with the a ∗ - and c ∗ -axes of the perovskite parallel to the a ∗ - or ( b ∗ -) axis of the substrate. At 780°C, large domains of ill-crystallized “123” phase form with the orthorhombic symmetry. After a slow cooling down under an oxygen pressure of 300 mbar, the film quality is improved and the a -axis orientation remains. When the oxygen introduction and cooling down processes are not optimized, a growth with the c -axis perpendicular to the substrate is observed. A model is proposed for the description of this mechanism requiring small displacements only at the level of one or two interatomic distances. |
| Databáze: | OpenAIRE |
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