| Autor: |
C. S. Chern, Y. Li, P. Zawadzki, S. Krishnankutty, R. A. Stall, R. M. Kolbas, Stephen J. Pearton, C. Yuan, Yicheng Lu, W. E. Mayo, Alexander I. Gurary, C.-Y. Hwang, M. Schurman, T. Salagaj, W. Kroll |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
ChemInform. 27 |
| ISSN: |
0931-7597 |
| DOI: |
10.1002/chin.199601285 |
| Popis: |
Very high quality p-type GaN thin films have been epitaxially grown on c-sapphire substrates by the MOCVD technique in a multiwafer rotating-disk reactor at 1040°C with a GaN buffer layer of ∼200 A grown at 530°C. The undoped GaN films have a low n-type background carrier concentration of ∼5 x 10 16 cm -3 with an x-ray FWHM GaN(0002) of 280 arc-sec across the 1 in. substrate. Biscyclopentadienyl magnesium (Cp 2 Mg) was used as the precursor Cp 2 Mg, the p-dopant. The Mg-doped GaN wafers retained an excellent surface morphology. In addition, after post annealing in N 2 ambient at ∼700°C for an hour, the Hall measurements show 6.7 x 10 17 to 5.2 x 10 18 cm -3 carrier concentration depending on Cp 2 Mg flow rate, with a hole mobility of 10-20 cm 2 /V-s which is the best mobility for those hole concentrations reported in the literature to date. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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