4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC $(11\bar{2}0)$
Autor: | Jun Suda, Masahiro Horita, Tsunenobu Kimoto, Masato Noborio |
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Rok vydání: | 2014 |
Předmět: |
Materials science
business.industry Transistor chemistry.chemical_element Nitride Epitaxy Electronic Optical and Magnetic Materials law.invention Threshold voltage Capacitor chemistry.chemical_compound Semiconductor chemistry law Aluminium Silicon carbide Optoelectronics Electrical and Electronic Engineering business |
Zdroj: | IEEE Electron Device Letters. 35:339-341 |
ISSN: | 1558-0563 0741-3106 |
DOI: | 10.1109/led.2014.2299557 |
Popis: | 4H silicon carbide (4H-SiC) metal-insulator- semiconductor field-effect transistors (MISFETs) with 4H aluminum nitride (4H-AlN) gate insulators have been demonstrated. The 4H-AlN layers are isopolytypically grown on 4H-SiC (1120) by molecular-beam epitaxy. Gate controlled transistor operation was realized using the AlN/SiC MISFETs. The MISFETs exhibit a low gate leakage current ( |
Databáze: | OpenAIRE |
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