4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC $(11\bar{2}0)$

Autor: Jun Suda, Masahiro Horita, Tsunenobu Kimoto, Masato Noborio
Rok vydání: 2014
Předmět:
Zdroj: IEEE Electron Device Letters. 35:339-341
ISSN: 1558-0563
0741-3106
DOI: 10.1109/led.2014.2299557
Popis: 4H silicon carbide (4H-SiC) metal-insulator- semiconductor field-effect transistors (MISFETs) with 4H aluminum nitride (4H-AlN) gate insulators have been demonstrated. The 4H-AlN layers are isopolytypically grown on 4H-SiC (1120) by molecular-beam epitaxy. Gate controlled transistor operation was realized using the AlN/SiC MISFETs. The MISFETs exhibit a low gate leakage current (
Databáze: OpenAIRE