Spectroscopic investigations of porous silicon prepared by laser-induced etching of silicon
| Autor: | H. S. Mavi, Bassam G. Rasheed, K. P. Jain, S. C. Abbi, Amit Shukla |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
Photoluminescence Acoustics and Ultrasonics Silicon Physics::Instrumentation and Detectors Scanning electron microscope technology industry and agriculture Analytical chemistry Physics::Optics chemistry.chemical_element Photon energy equipment and supplies Condensed Matter Physics Porous silicon Laser Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention symbols.namesake chemistry Etching (microfabrication) law symbols Raman spectroscopy |
| Zdroj: | Journal of Physics D: Applied Physics. 34:292-298 |
| ISSN: | 1361-6463 0022-3727 |
| Popis: | Porous silicon was fabricated by using a Nd:YAG laser in a laser-induced etching process. Scanning electron microscopy was used to monitor changes in surface morphology produced during the etching process. Porous silicon samples were subjected to spectroscopic investigations using an argon-ion laser. The first-order Raman line asymmetry was found to decrease with decrease of the incident argon-ion laser excitation photon energy, while the peak position remained unchanged for a given etching time and power density. The photoluminescence spectra exhibits a red shift in peak position and a dramatic decrease in intensity as the incident photon energy was decreased. Both Raman and photoluminescence data were explained using appropriate quantum confinement models involving two-dimensional confinement and Gaussian size distributions of nanocrystallites constituting porous silicon samples. There is reasonable agreement between the results obtained from Raman and photoluminescence spectroscopic investigations of the PS samples. |
| Databáze: | OpenAIRE |
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