Ultraviolet laser ablation as technique for defect repair of GaN-based light-emitting diodes
| Autor: | Thorsten Passow, Michael Binder, Alexander F. Pfeuffer, Joachim Wagner, Michael Kunzer |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Laser ablation business.industry 02 engineering and technology General Chemistry Nanosecond 010402 general chemistry 021001 nanoscience & nanotechnology Laser medicine.disease_cause 01 natural sciences 0104 chemical sciences law.invention law Sapphire medicine Optoelectronics General Materials Science 0210 nano-technology business Ultraviolet Diode Transparent conducting film Light-emitting diode |
| Zdroj: | Applied Physics A. 124 |
| ISSN: | 1432-0630 0947-8396 |
| DOI: | 10.1007/s00339-018-1681-7 |
| Popis: | Defect repair of GaN-based light-emitting diodes (LEDs) by ultraviolet laser micromachining is reported. Percussion and helical drilling in GaN by laser ablation were investigated using 248 nm nanosecond and 355 nm picosecond pulses. The influence of laser ablation including different laser parameters on electrical and optical properties of GaN-based LED chips was evaluated. The results for LEDs on sapphire with transparent conductive oxide p-type contact on top as well as for thin-film LEDs are reported. A reduction of leakage current by up to six orders in magnitude and homogeneous luminance distribution after proper laser defect treatment were achieved. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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