On the Role of Bulk Recombination of Intrinsic Point Defects in Si and their Interaction with the Surface in the Course of {113} Defect Growth: a Kinetic Study by in situ HVEM Irradiation

Autor:	Liudmila I. Fedina
Rok vydání:	2002
Předmět:	Surface (mathematics) In situ Radiation Materials science Silicon chemistry.chemical_element Condensed Matter Physics Kinetic energy Crystallographic defect chemistry Chemical physics Vacancy defect General Materials Science Irradiation Recombination
Zdroj:	Defect and Diffusion Forum. :21-36
ISSN:	1662-9507
DOI:	10.4028/www.scientific.net/ddf.210-212.21
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2cbfbf32d73801b0b61640000a1d010a https://doi.org/10.4028/www.scientific.net/ddf.210-212.21 Zobrazit plný text záznamu