AC and DC caracteristics of simulated Doped Graphene Field Effect Transistor (GFET) Frequency Multipliyer

Autor:	Ashish Kumar Patel, Pratik More, Amit Patwardhan, Rohit Nimje, Prakash Viswanathan, Rabinder Henry, Jayant Pawar
Rok vydání:	2019
Předmět:	Materials science business.industry General Engineering Optoelectronics Field-effect transistor Doped graphene business
Zdroj:	International Journal of Applied Engineering Research. 14:240
ISSN:	0973-9769 0973-4562
DOI:	10.37622/ijaer/14.1.2019.240-245
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2ca682cd6f316d9141504b763aad616d https://doi.org/10.37622/ijaer/14.1.2019.240-245 Zobrazit plný text záznamu