Monolithically Integrated Silicon Photodiode-Based FIR Filter in 65 nm CMOS Technology
| Autor: | Bong Chan Kim, Byunghoo Jung |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Materials science Silicon Finite impulse response business.industry Silicon photodiode Bandwidth (signal processing) chemistry.chemical_element Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Photodiode Capacitor CMOS chemistry law visual_art Electronic component visual_art.visual_art_medium Optoelectronics Hardware_ARITHMETICANDLOGICSTRUCTURES Electrical and Electronic Engineering business |
| Zdroj: | IEEE Photonics Technology Letters. 31:1359-1361 |
| ISSN: | 1941-0174 1041-1135 |
| Popis: | This letter presents a finite impulse response (FIR) filter utilizing segmented silicon (Si) photodiodes as a part of the filter for equalization. The filter utilizes an integrated Si photodiode divided into three segments which serve as current sources and capacitors, and realizes a high-pass FIR that partially compensates for the frequency-dependent gain loss due to the physical and the electrical bandwidths of Si photodiode. This technique is well-suited for low-power applications since it uses only passive components. The photodiode-based FIR filter is implemented in a standard 65-nm CMOS technology utilizing an n-well to p-substrate junction photodiode with 12 fingers. The photodiode has a measured physical bandwidth of 15 MHz and a simulated electrical bandwidth of 5.9 GHz. The filter compensates for the photodiode gain loss by 8.7 dB in the frequency range from 1 to 5 GHz. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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