Design and Simulation of Si and Ge Double-Gate Tunnel Field-Effect Transistors with High-κ Al2O3 Gate Dielectric: DC and RF Analysis
Autor: | Sambhu Prasad Malik, Ajeet Kumar Yadav, Robin Khosla |
---|---|
Rok vydání: | 2022 |
Zdroj: | Lecture Notes in Electrical Engineering ISBN: 9789811923074 |
Databáze: | OpenAIRE |
Externí odkaz: |