Design and Simulation of Si and Ge Double-Gate Tunnel Field-Effect Transistors with High-κ Al2O3 Gate Dielectric: DC and RF Analysis

Autor: Sambhu Prasad Malik, Ajeet Kumar Yadav, Robin Khosla
Rok vydání: 2022
Zdroj: Lecture Notes in Electrical Engineering ISBN: 9789811923074
Databáze: OpenAIRE