Reconnoitring the current characteristics of the double C20 fullerene molecular device in two probe configuration
| Autor: | Rupendeep Kaur, Noorinder Kaur |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Fullerene
Materials science Silicon Inorganic chemistry chemistry.chemical_element Germanium 02 engineering and technology 01 natural sciences Catalysis Inorganic Chemistry Condensed Matter::Materials Science Condensed Matter::Superconductivity 0103 physical sciences Nano Physics::Atomic and Molecular Clusters Physical and Theoretical Chemistry Boron 010302 applied physics business.industry Organic Chemistry Doping 021001 nanoscience & nanotechnology Computer Science Applications Computational Theory and Mathematics chemistry Electrode Optoelectronics Condensed Matter::Strongly Correlated Electrons 0210 nano-technology business Tin |
| Zdroj: | Journal of Molecular Modeling. 23 |
| ISSN: | 0948-5023 1610-2940 |
| DOI: | 10.1007/s00894-017-3430-9 |
| Popis: | It is worth remarking that the C20 cage like isomer has been the topic of concentrated theoretical research. C20 single fullerene molecular devices gained a lot of popularity in the field of nano research due to their superlative doping dependent conductive properties. In this work, the double fullerene device has been considered. Here double fullerene molecular junction is created when two C20 fullerene molecules, one in pristine form and other in doped form, are positioned between gold electrodes. Doping was done firstly by second period elements, boron, nitrogen, oxygen, and fluorine and then by group 14 tetragens, silicon, germanium, tin, and lead. For both the cases current characteristics were investigated. Superior conductivity was observed in the boron doped double C20 molecular device while the fluorine doped device was the least conducting. Further for group 14 doping, the silicon doped double C20 device showed maximum current carrying feature, whereas, least value of current was noted in tin doped C20 device. |
| Databáze: | OpenAIRE |
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