Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone
| Autor: | Amy J. Allen, Ravindra K. Kanjolia, Jeffrey W. Elam, Anil U. Mane |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Chemistry Scanning electron microscope Inorganic chemistry Analytical chemistry Oxide chemistry.chemical_element 02 engineering and technology Quartz crystal microbalance 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Atomic layer deposition chemistry.chemical_compound General Energy X-ray photoelectron spectroscopy 0103 physical sciences Physical and Theoretical Chemistry Thin film Trimethylindium 0210 nano-technology Indium |
| Zdroj: | The Journal of Physical Chemistry C. 120:9874-9883 |
| ISSN: | 1932-7455 1932-7447 |
| DOI: | 10.1021/acs.jpcc.6b02657 |
| Popis: | We investigated the atomic layer deposition (ALD) of indium oxide (In2O3) thin films using alternating exposures of trimethylindium (TMIn) and a variety of oxygen sources: ozone (O3), O2, deionized H2O, and hydrogen peroxide (H2O2). We used in situ quartz crystal microbalance measurements to evaluate the effectiveness of the different oxygen sources and found that only O3 yielded viable and sustained In2O3 growth with TMIn. These measurements also provided details about the In2O3 growth mechanism and enabled us to verify that both the TMIn and O3 surface reactions were self-limiting. In2O3 thin films were prepared and characterized using X-ray diffraction, ultraviolet–visible spectrophotometry, spectroscopic ellipsometry, X-ray photoelectron spectroscopy, and scanning electron microscopy. The electrical transport properties of these layers were studied by Hall probe measurements. We found that, at deposition temperatures within the range of 100–200 °C, the In2O3 growth per cycle was nearly constant at 0.4... |
| Databáze: | OpenAIRE |
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