0.5 μm GaN RF power bar technology space evaluation
| Autor: | M. Grunwald, J. Van de Casteele, S. Van Den Berghe, C. Gourdon, M. Hollmer, H. Stuhldreier, D. Bouw, Benoit Lambert, M. Raoult, Hervé Blanck, E. Durand, Andrew Barnes |
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| Rok vydání: | 2020 |
| Předmět: |
Bar (music)
02 engineering and technology Integrated circuit Space (mathematics) 01 natural sciences law.invention law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering Safety Risk Reliability and Quality Radiation hardening 010302 applied physics Physics business.industry 020208 electrical & electronic engineering RF power amplifier Mode (statistics) Electrical engineering Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Continuous wave Test plan business |
| Zdroj: | Microelectronics Reliability. 114:113894 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2020.113894 |
| Popis: | This paper describes the test plan and the main results achieved by UMS during a space evaluation of its second generation 0.5 μm GaN RF power bar technology, called GH50-20. The space evaluation tests results are summarised: a life time higher than 5.106 h @ 200 °C is found, SEE, TID and DD radiation hardness safe area were defined, and failure rate below 10 FIT @ 200 °C was determined. The results also include demonstration of representative integrated circuits up to 130 W RF power level when operated in L-band in continuous wave (CW) mode. The GH50-20 technology has successfully passed the space evaluation program and is deemed suitable for use in space. |
| Databáze: | OpenAIRE |
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