| Autor: |
Zhuang Hao Zheng, Ping Fan, Peng Juan Liu, Qing Yun Lin, Ying Zhen Li, Jing Ting Luo |
| Rok vydání: |
2013 |
| Předmět: |
|
| Zdroj: |
Advanced Materials Research. :2559-2562 |
| ISSN: |
1662-8985 |
| DOI: |
10.4028/www.scientific.net/amr.734-737.2559 |
| Popis: |
Direct current magnetron co-sputtering was used to deposit zinc antimonide thin films on BK7 glass substrates at room-temperature. Then the films were annealed at 573 K to 673 K for 1 hour in Ar atmosphere. The results indicate that the Seebeck coefficient of the thin films increase from 30.5 μVK-1to 132.5 μVK-1 when the annealing temperature changed. The electrical conductivity of the thin films increases from 3.45×103 to 6.86×103 Sm-1 and the Power Factor is enhanced greatly from 0.03×10-4 to 0.99×10-4 Wm-1K-2 when the annealing temperature reached 598 K. X-ray diffraction result shows that the major diffraction peaks of the thin films match those of β phase Zn4Sb3 and high crystalline thin films are achieved after annealing. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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