Crystal field effects in the electrical resistivity of NdIn3 and NdSn3

Autor:	Z. Kletowski, B. Staliński, P.J. Markowski
Rok vydání:	1986
Předmět:	Crystal Nuclear magnetic resonance Condensed matter physics Field (physics) Chemistry Electrical resistivity and conductivity Materials Chemistry General Chemistry Born approximation Condensed Matter Physics Single crystal Coincidence
Zdroj:	Solid State Communications. 57:293-296
ISSN:	0038-1098
Popis:	The experimentally determined magnetic contributions to the total resistivity of NdIn 3 and NdSn 3 compounds have been compared with those calculated in the first Born approximation. For NdSn 3 the satisfactory agreement between theory and experiment was obtained. In the case of NdIn 3 the coincidence was worse and therefore it was not possible to judge unmistakably about the specific CEF level sequence.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2c72b09d8df9cc4aa120622a5015e33d https://doi.org/10.1016/0038-1098(86)90160-2 Zobrazit plný text záznamu