Pulsed Laser Deposited ZnO for Thin Film Transistor Applications

Autor:	Kevin D. Leedy, Burhan Bayraktaroglu
Rok vydání:	2008
Předmět:	Pulsed laser Materials science Thin-film transistor business.industry Optoelectronics business Pulsed laser deposition
Zdroj:	ECS Transactions. 16:61-73
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.2985844
Popis:	The film growth conditions were optimized for pulsed laser deposited ZnO thin films for high performance field effect transistor applications. Transistors fabricated on Si and GaAs substrates with various gate lengths and gate widths and demonstrated current on/off ratios better than 1012, current density of >700mA/mm, sub-threshold gate voltage slope of 109mV/decade, current gain cutoff frequency of 500MHz, and power gain cutoff frequency of 400MHz (2um gate device).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2c6d6108585ff6fe21a1ea51fbdf50e1 https://doi.org/10.1149/1.2985844 Zobrazit plný text záznamu