Growth and properties of GaAsSb/InP and GaAsSb/InAlAs superlattices on InP

Autor:	N. Moll, Danielle R. Chamberlin, S.S. Yi, M. Juanitas, R. Moon, David P. Bour, G. Girolami
Rok vydání:	2003
Předmět:	Chemistry business.industry Superlattice Cathodoluminescence Condensed Matter Physics Epitaxy Inorganic Chemistry Optics Transmission electron microscopy Materials Chemistry Optoelectronics Thin film Electronic band structure Luminescence business Spectroscopy
Zdroj:	Journal of Crystal Growth. 248:284-288
ISSN:	0022-0248
Popis:	GaAsSb/InP superlattices (SLs) grown on InP using metalorganic vapor phase epitaxy are investigated by low-temperature cathodoluminescence (CL) spectroscopy, transmission electron microscopy, and X-ray diffraction. The low-temperature CL spectra show the spatially indirect type II transition across the GaAsSb/InP interface. From type II luminescence, the conduction and valence band offsets between GaAsSb and InP are derived. The optical properties of GaAsSb/InAlAs SLs, which have type I band alignment, are compared with those of GaAsSb/InP SLs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2c62627ef940f8915ca5a9a3904e5a24 https://doi.org/10.1016/s0022-0248(02)01872-9 Zobrazit plný text záznamu Full Text from ScienceDirect