Sub-10-nm multifacet domelike Ge quantum dots grown on clean Si (001) (2×1) surface

Autor:	Cheng-Xiao Peng, Weifeng Zhang, Ke-Fan Wang, Wenhua Zhang
Rok vydání:	2011
Předmět:	Photoluminescence Annealing (metallurgy) Analytical chemistry Nucleation chemistry.chemical_element Germanium General Chemistry law.invention Crystallography chemistry Quantum dot law General Materials Science Area density Scanning tunneling microscope Molecular beam epitaxy
Zdroj:	Applied Physics A. 104:573-578
ISSN:	1432-0630 0947-8396
DOI:	10.1007/s00339-011-6484-z
Popis:	Sub-10-nm multifacet domelike Ge quantum dots (QDs) ensembles with uniform size have been achieved on a clean Si (001) (2×1) reconstructed surface at a substrate temperature of 450°C, total Ge coverage of 7 ML, Ge deposition rate of ∼0.0115 ML/s and no post-annealing. Their areal density and diameter are 5.2×1011 cm−2 and 7.2±2.3 nm, respectively, which is explained by a pit-mediated mass transferring nucleation mechanism suggested by us. According to the phase diagram analysis, their domelike morphology can be attributed to a relatively high growth temperature. Their high density and small size result in a strong non-phonon peak with a large blue shift of 0.19 eV in the low-temperature photoluminescence spectrum.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2c5ab0a6a048273352903594027de73a https://doi.org/10.1007/s00339-011-6484-z Zobrazit plný text záznamu Plný text ve formátu PDF