Features of conduction mechanisms in Si/oligo-β-naphthol/metal heterostructures
| Autor: | N. N. Abdulzade, N. N. Mursakulov, R. K. Guseynov, B. A. Mamedov, U. F. Samedova, Sh. M. Hasannli |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Materials science
Field (physics) business.industry Schottky diode Heterojunction Atmospheric temperature range Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Thermal conduction Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Metal Chemical physics Electric field visual_art visual_art.visual_art_medium Optoelectronics business Quantum tunnelling |
| Zdroj: | Semiconductors. 44:875-878 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782610070080 |
| Popis: | Conduction mechanisms in Si-polymer-metal heterostructures with oligo-β-naphthol as a wide band-gap polymer have been studied. The results obtained are explained within the models of hopping transport via trap levels, Schottky emission, and field tunneling emission. Different charge transport mechanisms operate in different temperature ranges and under different electric fields. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|