Investigation of Buffer Traps in AlGaN/GaN Heterostructure Field-Effect Transistors Using a Simple Test Structure

Autor:	Jong Hoon Shin, Hyo-Seung Choi, Hyuck-In Kwon, Hun Jeong, Seung Yup Jang, Sang-Hun Song, Eu Jin Hwang
Rok vydání:	2014
Předmět:	Materials science business.industry Transistor Doping Heterojunction Buffer (optical fiber) Electronic Optical and Magnetic Materials law.invention Barrier layer law Test structure Simple (abstract algebra) Electric field Optoelectronics Electrical and Electronic Engineering business
Zdroj:	JSTS:Journal of Semiconductor Technology and Science. 14:478-483
ISSN:	1598-1657
DOI:	10.5573/jsts.2014.14.4.478
Popis:	We propose a new method which can extract the information about the electronic traps in the semi-insulating GaN buffer of AlGaN/GaN heterostructure field-effect transistors (HFETs) using a simple test structure. The proposed method has a merit in the easiness of fabricating the test structure. Moreover, the electric fields inside the test structure are very similar to those inside the actual transistor, so that we can extract the information of bulk traps which directly affect the current collapse behaviors of AlGaN/GaN HEFTs. By applying the proposed method to the GaN buffer structures with various unintentionally doped GaN channel thicknesses, we conclude that the incorporated carbon into the GaN back barrier layer is the dominant origin of the bulk trap which affects the current collapse behaviors of
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2c527ce54f759e8987b2d86c1d1c03e8 https://doi.org/10.5573/jsts.2014.14.4.478 Zobrazit plný text záznamu