Relationship between gas flows and film composition in organometallic vapor phase epitaxy of In1−xGaxAs

Autor:	Raj Solanki, U. Sudarsan, T. Dosluoglu
Rok vydání:	1990
Předmět:	Inorganic Chemistry Chemistry Lattice (order) Vapor phase Inorganic chemistry Materials Chemistry Analytical chemistry Condensed Matter Physics Epitaxy Volumetric flow rate
Zdroj:	Journal of Crystal Growth. 106:643-650
ISSN:	0022-0248
DOI:	10.1016/0022-0248(90)90038-m
Popis:	Relationship between the flow rates of the precursor gases and the composition of In1−xGaxAs epilayers on InP has been examined. Based on experimental data a linear model has been developed to predict this relationship. This model has been used to obtain lattice matching to better than 1.2 × 10-4.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2c43c805f45d9b214d39fa15a79e1895 https://doi.org/10.1016/0022-0248(90)90038-m Zobrazit plný text záznamu