Femtosecond studies of intraband relaxation in GaAs, AlGaAs, and GaAs/AlGaAs multiple quantum well structures

Autor:	D. J. Erskine, A. J. Taylor, C. L. Tang
Rok vydání:	1984
Předmět:	Condensed Matter::Materials Science Photon Materials science Physics and Astronomy (miscellaneous) Scattering Excited state Femtosecond Relaxation (NMR) Heterojunction Atomic physics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electronic band structure Excitation
Zdroj:	Applied Physics Letters. 45:54-56
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.94984
Popis:	Femtosecond intraband relaxation dynamics of hot carriers in highly excited states of GaAs, AlGaAs, and AlGaAs/GaAs multiple quantum well (MQW) structures are studied at room temperature using the equal‐pulse correlation technique. Initial carrier lifetimes of 35, 60, and 50 fs are measured for GaAs, Al0.32Ga0.68As, and MQW structures for excitation with 2.02‐eV photons at low carrier densities, and are in reasonable agreement with calculated scattering rates. The carrier‐density dependence of these lifetimes is measured for densities in the range 1.5×1017–5×1019 cm−3.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2c42ef3fe20dada6f2668e25f304e63f https://doi.org/10.1063/1.94984 Zobrazit plný text záznamu