Breakdown and dynamic effects in GaN power switching devices

Autor:	Olaf Krüger, Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, Oliver Hilt, Przemyslaw Kotara, Rimma Zhytnytska, Markus Weyers
Rok vydání:	2013
Předmět:	Materials science Passivation business.industry Power electronics Optoelectronics Breakdown voltage High voltage Power semiconductor device Condensed Matter Physics business Epitaxy Layer (electronics) Buffer (optical fiber)
Zdroj:	physica status solidi c. 10:1393-1396
ISSN:	1610-1642 1862-6351
Popis:	Approaches towards fast switching GaN devices for applications in power electronics are presented. First, an overview on breakdown mechanisms in GaN power devices is given. Suitable techniques towards devices with high breakdown strength are then discussed and set into relation to their specific dynamic switching properties. It has been found that dynamic switching properties of GaN power devices may be significantly compromised at high drain bias levels. The dynamic effects depend on technological parameters such as epitaxial layer design and crystalline quality of the buffer layer, passivation layers and the lateral device designs (e.g. field plate arrangements). GaN high voltage switching devices therefore require a balanced trade-off between all these influencing quantities. This paper concentrates on dependencies related to the epitaxial design of the buffer layer(s). (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2c2c68974b0dc10be987032202cea12a https://doi.org/10.1002/pssc.201300244 Zobrazit plný text záznamu Plný text