Critical review of the current status of thickness measurements for ultrathin SiO2 on Si Part V: Results of a CCQM pilot study
| Autor: | Ulrich E. Klotz, W A. Jordaan, Deane Chandler-Horowitz, Michael Krumrey, Martin P. Seah, H Y. Chen, Farid Bensebaa, Isao Kojima, Y. Tamminga, H.-U. Danzebrink, Andrew T. S. Wee, Thomas Osipowicz, I Vickridge, Shigeo Tanuma, H Cho, D Muller, S Biswas, Roland Hauert, Elke Wendler, Noboru Suzuki, Nhan V. Nguyen, Marcel A. Verheijen, Yasushi Azuma, Joseph A. Dura, Steve J. Spencer, Paul Bailey, U Falke, Th. Gross, Mineharu Suzuki, Bernd Rheinländer, W Oesterle, Hansuek Lee, James R. Ehrstein, C. van der Marel, Chris Jeynes, D. W. Moon, J S. Pan |
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| Rok vydání: | 2004 |
| Předmět: |
Chemistry
Scattering Analytical chemistry Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films X-ray photoelectron spectroscopy Ellipsometry Transmission electron microscopy Nuclear reaction analysis Materials Chemistry Wafer Neutron reflectometry Reflectometry |
| Zdroj: | Surface and Interface Analysis. 36:1269-1303 |
| ISSN: | 1096-9918 0142-2421 |
| DOI: | 10.1002/sia.1909 |
| Popis: | A study was carried out for the measurement of ultrathin SiO on (100) and (111) orientation silicon wafer in the thickness range 1.5-8 nm. XPS, medium-energy ion scattering spectrometry (MEIS), nuclear reaction analysis (NRA), RBS, elastic backscattering spectrometry (EBS), SIMS, ellipsometry, gazing-incidence x-ray reflectometry (GIXRR), neutron reflectometry and transmission electron microscopy (TEM) were used for the measurements. Water and carbonaceous contamination about 1 nm were observed by ellipsometry and adsorbed oxygen mainly from water at thickness of 0.5 nm were seen by MEIS, NRA, RBS and GIXRR. The different uncertainty of the techniques for the scaling constant were also discussed. |
| Databáze: | OpenAIRE |
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