| Popis: |
Zinc phosphide (Zn3P2) thin films (~10 μm) have been grown by close-spaced sublimation. The electrical, optical, and crystallographic properties of the synthesized Zn3P2 are measured. The as-grown films exhibit hole carrier concentrations of about 1016 holes/cm3, resistivity on the order of 102 Ohm·cm, and large grain size (1-10 μm), making them promising for thin-film solar cell applications. We find that while exposure to atmosphere is detrimental to the electrical properties, annealing films above 350°C, especially in oxygen ambient, drastically reverses these effects. |
