Enhanced thermal conductivity interface by covalently bridging on cu-zn alloy with functionalized graphene through pulse electrodeposition
| Autor: | Hongqiang Wang, Fu Hao, Lai Feiyan, Xiaohui Zhang, Wang Shaoyi, Xingcun He, Qingyu Li, Huang Youguo |
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| Rok vydání: | 2020 |
| Předmět: |
Thermogravimetric analysis
Materials science Thermal resistance 02 engineering and technology 01 natural sciences law.invention Electrophoretic deposition symbols.namesake chemistry.chemical_compound Thermal conductivity law 0103 physical sciences Materials Chemistry Thermal stability 010302 applied physics Graphene Metals and Alloys Trimethylsilane Surfaces and Interfaces 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials Chemical engineering chemistry symbols 0210 nano-technology Raman spectroscopy |
| Zdroj: | Thin Solid Films. 709:138126 |
| ISSN: | 0040-6090 |
| Popis: | Special thermal conductivity bridging is conducted between metal matrix and graphene oxide (GO) with covalent bond (Cu-O-Si-O-C) from γ-glycidylether propyl trimethylsilane (GPTS) to decrease thermal resistance and weaken phonon scattering through interface. The implementation of this bridging process involves a pulsed electrophoretic deposition, in which the GPTS modified GO as thermal conductivity reinforcing material was deposited onto the Cu-Zn alloy. The composite morphology and interfacial structure by field emission environment scanning electron microscope shows that the GPTS-GO is uniformly deposited on the substrate surface, and there is no interlayer of the GPTS-GO/Cu differing from the GO/Cu without GPTS. Raman spectrum reveals the bonding of Cu-O-Si and Si-O-C to prove the bridging role of GPTS by structural defects of the graphene and the changes of relative characteristic peaks before and after modification, as well as the Fourier transform infrared spectrum results confirming the Cu-O-Si-O-C covalent bonds. Compared to the thermal stability and thermal conductivity by thermogravimetric analyzer from room temperature to a higher temperature of 150 °C for the GO/Cu sample without GPTS, the GPTS-GO/Cu exhibits significantly improved performances. The thermal conductivity achieves 415.2 and 361.9 W/mK at 50 °C to 150 °C, which is 5.01% and 6.00% higher than that of the GO/Cu, The thermal diffusion coefficient achieves 1.236 and 1.087 cm2/s at 50 °C to 150 °C, respectively. |
| Databáze: | OpenAIRE |
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