An Al-doped TiO2 interfacial layer for effective hole injection characteristics of quantum-dot light-emitting diodes

Autor:	Min Gye Kim, Jae Seung Shin, Jin Hyun Ma, Jun Hyung Jeong, Dong Hee Han, Beom-Su Kim, Woojin Jeon, Yongsup Park, Seong Jun Kang
Rok vydání:	2022
Předmět:	Materials Chemistry General Chemistry
Zdroj:	Journal of Materials Chemistry C. 10:7294-7303
ISSN:	2050-7534 2050-7526
DOI:	10.1039/d2tc00678b
Popis:	Al-doped TiO2 (ATO) interfacial layer improves the charge balance and the performance of quantum-dot light-emitting diodes (QLEDs).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2beebb8b7eb4708525e743dd84c40270 https://doi.org/10.1039/d2tc00678b Zobrazit plný text záznamu