| Autor: |
H.C. Huang, F.R. Phelleps, G. Hegazi, H.-L.A. Hung, K.E. Peterson |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988.. |
| Popis: |
An MMIC (microwave monolithic integrated circuit) using a dual-gate MESFET (DGMF) for variable-power application in the 33-GHz band has been developed. A single-stage amplifier demonstrated a linear gain of 9.1 dB and a dynamic range of 30 dB. A two-stage balanced amplifier provided a linear gain of 16.5 dB and maximum output power of 25.3 dBm at 33 GHz. Minimal variations in the insertion phase and power-added efficiency of the DGMF as a function of second-gate control also were demonstrated. This device may be suitable for application in phased-array systems for communications satellites and radar systems. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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