Current-handling and switching performance of MOS-controlled thyristor (MCT) structures

Autor:	Friedhelm Dr. Bauer, H. Hollenbeck, Thomas Stockmeier, Wolfgang Fichtner
Rok vydání:	1991
Předmět:	Engineering business.industry Electrical engineering Thyristor MOS-controlled thyristor Cathode Electronic Optical and Magnetic Materials Anode law.invention Integrated gate-commutated thyristor Switching time law MOSFET Electrical and Electronic Engineering business Voltage
Zdroj:	IEEE Electron Device Letters. 12:297-299
ISSN:	1558-0563 0741-3106
DOI:	10.1109/55.82066
Popis:	Experimental results are reported for array-type MCT devices fabricated using a BiMOS process with additional power-specific fabrication steps. Stationary measurements of both the thyristor forward behavior and the intrinsic p-channel MOSFET switch characteristics are an indication of the device quality. Through dynamic testing procedures, the device was analyzed in its transient current handling. The combination of anode current and blocking voltage values is the highest ever reported on MCT devices (2 kV, 5 A, in 2 mu s). >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2bd20f0b5c8fdb4575249420d7a560e1 https://doi.org/10.1109/55.82066 Zobrazit plný text záznamu