Role of Q-carbon in nucleation and formation of continuous diamond film
| Autor: | Anagh Bhaumik, Parand R. Riley, Roger J. Narayan, Jagdish Narayan, Siddharth Gupta, Pratik Joshi |
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| Rok vydání: | 2021 |
| Předmět: |
Q-carbon
Materials science business.industry Nucleation chemistry.chemical_element Diamond 02 engineering and technology General Chemistry Substrate (electronics) engineering.material 010402 general chemistry 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences 0104 chemical sciences Amorphous solid chemistry Sapphire engineering Optoelectronics General Materials Science 0210 nano-technology business Carbon |
| Zdroj: | Carbon. 176:558-568 |
| ISSN: | 0008-6223 |
| DOI: | 10.1016/j.carbon.2021.02.049 |
| Popis: | Formation of continuous and adherent diamond films on practical substrates presents a formidable challenge due to lack of diamond nucleation sites needed for diamond growth. This problem has been solved through the formation of interfacial Q-carbon layers by nanosecond laser melting of carbon layers in a highly undercooled state and subsequent quenching. The Q-carbon layer provides ready nucleation sites for epitaxial films on planar matching substrates such as sapphire, and polycrystalline films on amorphous substrates such as glass. Each laser pulse converts about a one-cm-square area, which can be repeated with a 100–200 Hz laser to produce potentially 100–200 cm2s-1 of diamond films. This is essentially a low-temperature processing, where substrate stays close to ambient temperature, because the total heat input is quite small. The Q-carbon layer is also responsible for improved adhesion of diamond films on sapphire and glass substrates. It is also argued that the formation of Q-carbon layer is also responsible for efficient diamond nucleation during negatively biased MPCVD diamond depositions. |
| Databáze: | OpenAIRE |
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