| Autor: |
E A Steinman, Eugene B. Yakimov, A. N. Tereshchenko, K N Filonov |
| Rok vydání: |
2011 |
| Předmět: |
|
| Zdroj: |
Journal of Physics: Conference Series. 281:012019 |
| ISSN: |
1742-6596 |
| DOI: |
10.1088/1742-6596/281/1/012019 |
| Popis: |
SiC films grown by vapor phase reaction consist of multicrystalline grains. The size of grains depends on growth parameters, such as temperature and the relative concentration of the Si and C components. A small fraction of large grains demonstrate very efficient luminescence. Several techniques have been used to study the origin of the luminescence. Cathodoluminescence and photoluminescence revealed flat regions as sources of emission. Diffraction of back scattered electrons and X-ray analysis suggests that efficient emission is observed for grains with a small fraction of the rhombohedral phase. On the basis of the experimental data we assumed that the layers of rhombohedral phase or the interface between these layers and the host material are the origin of the luminescence. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
