Influence of the crystallographic orientation of the surface on damage and chemical effects in ion-implanted MgO

Autor:	L. Gea, P. Thevenard, R. Brenier, Bruno Canut, M. Beranger, Stella M. M. Ramos
Rok vydání:	1995
Předmět:	Nuclear and High Energy Physics Radiation Materials science Binding energy Niobium chemistry.chemical_element Condensed Matter Physics Fluence Ion Crystallography Ion implantation chemistry X-ray photoelectron spectroscopy General Materials Science Irradiation Spectroscopy
Zdroj:	Radiation Effects and Defects in Solids. 136:261-265
ISSN:	1029-4953 1042-0150
DOI:	10.1080/10420159508218832
Popis:	The influence of the crystallographic orientation of the surface on ion implantation damage was studied in MgO single crystals. For this purpose, rare gas ions (150 keV-argon) or reactive ions (150 keV-niobium) were implanted at room temperature in (100) and (110) MgO surfaces at a fluence of 5,10 16 ions.cm -2 . With the mean of Rutherford Backscattering Spectroscopy in channeling geometry (RBS-C), it is shown that the damage depends on the crystallographic orientation of the MgO surface. The (100) irradiated surfaces exhibit a localized damage as predicted by TRIM code calculations while in (100) MgO, the defects extend in depth. Chemical effects are also dependent on the crystallographic orientations of the implanted surfaces : the substitutional fraction of the implanted niobium determined by RBS-C and the niobium binding energy estimated by XPS analysis are different in the (110) and (100) MgO irradiated surfaces.
Databáze:	OpenAIRE
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