Analog resistive-switching property of Ni/TiOx/W structure

Autor:	Chih-Yi Liu, Shih-Kun Liu, Chung-Chia Huang, Chao-Cheng Lin, Chun-Hung Lai
Rok vydání:	2022
Předmět:	Statistical and Nonlinear Physics Condensed Matter Physics
Zdroj:	Modern Physics Letters B. 36
ISSN:	1793-6640 0217-9849
DOI:	10.1142/s0217984922420386
Popis:	A radio-frequency magnetron sputter was used to deposit a 60 nm TiO[Formula: see text] film on a W-coated Si substrate at room temperature. Subsequently, a 100 nm Ni film was deposited using a thermal evaporator to form a Ni/TiO[Formula: see text]/W structure. Numerous oxygen vacancies and defects were present in the TiO[Formula: see text] film. The current–voltage characteristics indicate that Schottky emission dominated the conduction mechanism of the Ni/TiO[Formula: see text]/W structure. Because of Schottky barrier modulation, analog resistive switching of the Ni/TiO[Formula: see text]/W structure can be performed using consecutive voltage sweepings or voltage pulses. Various pulse waveforms were used to demonstrate synaptic potentiation and depression.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2ba4e1df1f572efa1fd0c394b9ca042a https://doi.org/10.1142/s0217984922420386 Zobrazit plný text záznamu