Environmental effects on the electrical behavior of pentacene thin-film transistors with a poly(methyl methacrylate) gate insulator
| Autor: | Yesul Jeong, Jin-Hyuk Bae, Jaehoon Park, Michael C. Petty, Christopher Pearson, Lee-Mi Do |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Gate dielectric Transistor General Chemistry Permeation Condensed Matter Physics Poly(methyl methacrylate) Electronic Optical and Magnetic Materials Threshold voltage law.invention Biomaterials Pentacene chemistry.chemical_compound chemistry Thin-film transistor law visual_art Materials Chemistry visual_art.visual_art_medium Optoelectronics Electrical and Electronic Engineering Methyl methacrylate business |
| Zdroj: | Organic Electronics. 14:2101-2107 |
| ISSN: | 1566-1199 |
| DOI: | 10.1016/j.orgel.2013.05.009 |
| Popis: | The electrical properties of top-contact pentacene thin-film transistors (TFTs) with a poly(methyl methacrylate) (PMMA) gate dielectric were analyzed in air and vacuum environments. Compared to the vacuum case, the pentacene TFT in air exhibited lower drain currents and more pronounced shifts in the threshold voltage upon reversal of the gate voltage sweep direction, together with a decrease in the field-effect mobility. These characteristic variations were explained in terms of two distinctive actions of polar H2O molecules in pentacene TFT. H2O molecules were suggested to diffuse under the source and drain contacts and interrupt the charge injection into the pentacene film, whereas those that permeate at the pentacene/PMMA interface retard hole depletion in and around the TFT channel. The diffusion process was much slower than the permeation process. The degraded TFT characteristics in air could be recovered mostly by storing the device under vacuum, which suggests that the air instability of TFTs is due mainly to the physical adsorption of H2O molecules within the pentacene film. |
| Databáze: | OpenAIRE |
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