Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in ${\rm HfGeO}_{\rm x}$ Interfacial Layer Formed by In Situ Desorption

Autor:	Jen-Wei Cheng, Chun-Chang Lu, Ting-Ching Chen, Chung-Hao Fu, Kuei-Shu Chang-Liao, Tzu-Min Lee, Chen-Chien Li, Li-Jung Liu, Tien-Ko Wang
Rok vydání:	2014
Předmět:	Suboxide Materials science Analytical chemistry chemistry.chemical_element Equivalent oxide thickness Germanium Plasma Electronic Optical and Magnetic Materials Atomic layer deposition chemistry Oxidation state Desorption Electrical and Electronic Engineering Layer (electronics)
Zdroj:	IEEE Electron Device Letters. 35:509-511
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2014.2310636
Popis:	Ge MOS devices with about 95% Ge4+ in HfGeOx interfacial layer are obtained by H2O plasma process together with in situ desorption before atomic layer deposition (ALD). The equivalent oxide thickness is scaled down to 0.39 nm; the leakage current is decreased as well. The improvement can be attributed to the in situ Ge suboxide desorption process in an ALD chamber at 370 °C. The interface trap density and frequency dispersion need further process development to be reduced.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2ba199c01014984ece94a349f9946008 https://doi.org/10.1109/led.2014.2310636 Zobrazit plný text záznamu