Capacitance‐Voltage Characteristics of Metal Barriers onpPbTe andpInAs: Effects of the Inversion Layer
| Autor: | Kenneth W. Nill, James N. Walpole |
|---|---|
| Rok vydání: | 1971 |
| Předmět: |
Materials science
Condensed matter physics Schottky barrier General Physics and Astronomy chemistry.chemical_element Inversion (meteorology) Nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Capacitance law.invention Metal Condensed Matter::Materials Science chemistry law visual_art visual_art.visual_art_medium Tin Layer (electronics) Voltage |
| Zdroj: | Journal of Applied Physics. 42:5609-5617 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1659990 |
| Popis: | The dependence of the capacitance C on the voltage is derived for metal‐semiconductor barriers in which there is a strong inversion layer at the metal‐semiconductor interface, a case of interest in the study of surface effects and in applications for laser structures. Experimental results for evaporated lead and tin barriers on p PbTe at 77 °K and for evaporated gold barriers on p InAs at 77 and 4.2 °K are presented and compared to calculations performed with the inversion layer model. Both the theory and experiment show an essentially linear dependence of C−2 with voltage, as in the usual Schottky barrier, but a voltage intercept which is surprisingly dependent on band‐structure parameters, bulk carrier concentration, and temperature. Reasonable quantitative agreement between the theory and experiment is obtained. In all cases the presence of a strong inversion layer can be clearly established. The analysis of the capacitance‐voltage data, however, gives only a lower limit to the amount of inversion present. |
| Databáze: | OpenAIRE |
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