Comparative studies on the DC and RF performances of conventional HEMT and double quantum well heterostructure
| Autor: | Subhadeep Mukhopadhyay, Avrajyoti Dutta, Sanjib Kalita |
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| Rok vydání: | 2021 |
| Předmět: |
Power gain
Materials science Fabrication business.industry Peak current Heterojunction 02 engineering and technology High-electron-mobility transistor 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials 010309 optics 0103 physical sciences Optoelectronics Electrical and Electronic Engineering Double quantum 0210 nano-technology business Drain current Computer communication networks |
| Zdroj: | Optical and Quantum Electronics. 53 |
| ISSN: | 1572-817X 0306-8919 |
| DOI: | 10.1007/s11082-021-02750-0 |
| Popis: | In this work, we propose a novel double quantum well (QW) high electron mobility transistor (HEMT) structure. The DC and RF performances of this proposed structure are compared with those of conventional single QW HEMT. According to this work, the peak drain current of 651 mA/mm is achieved in conventional single QW HEMT, and the peak drain current of 758 mA/mm is achieved in proposed double QW HEMT. Also, the peak transconductances related to the proposed HEMT and conventional HEMT are compared. The peak current gain cut-off frequencies of two structures are compared. Also, the peak power gain cut-off frequencies of two structures are compared. According to these comparisons by simulation studies, the proposed double QW HEMT is more electrically efficient than the conventional single QW HEMT. Therefore, this present work may be a suitable prediction for the experimental fabrication of proposed double QW HEMT in future. This work may be suitable in sensor related applications and high frequency applications. |
| Databáze: | OpenAIRE |
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